semix604gb176hds ? by semikron 03.04.2008 1 semix ? 4s gb trench igbt modules semix604gb176hds preliminary data features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications ? ac inverter drives ?ups ? electronic welders remarks absolute maximum ratings symbol conditions values unit igbt v ces 1700 v i c t j = 150c t c = 25c 567 a t c = 80c 402 a i crm i crm = 2xi cnom 800 a v ges -20 ... 20 v t psc v cc = 1000v v ge 20v t j = 125c v ces 1700v 10 s t j -55 ... 150 c inverse diode i f t j = 150c t c = 25c 740 a t c = 80c 496 a i frm i frm = 2xi fnom 800 a i fsm t p = 10ms, half sine wave, t j =25c 2700 a t j -40 ... 150 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 60s 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i cnom = 400a v ge = 15v chiplevel t j = 25c 22.45v t j = 125c 2.45 2.9 v v ce0 t j = 25c 11.2v t j = 125c 0.9 1.1 v r ce v ge = 15v t j = 25c 2.5 3.1 m ? t j = 125c 3.9 4.5 m ? v ge(th) v ge =v ce , i c = 16ma 5.2 5.8 6.4 v i ces v ge =0v v ce = 1700v t j = 25c 0.12 0.36 ma t j = 125c ma c ies v ce =25v v ge =0v f=1mhz 35.3 nf c oes f=1mhz 1.46 nf c res f=1mhz 1.17 nf q g v ge =- 8 v...+ 15 v 3732 nc r gint t j = 25c 1.88 ? t d(on) v cc = 1200v i cnom = 400a t j = 125c r g on =3 ? r g off =3 ? 360 ns t r 65 ns e on 215 mj t d(off) 900 ns t f 165 ns e off 165 mj r th(j-c) per igbt 0.058 k/w
semix604gb176hds 2 03.04.2008 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i fnom = 400a v ge =0v chiplevel t j = 25c 1.5 1.7 v t j = 125c 1.4 1.6 v v f0 t j = 25c 0.9 1.1 1.3 v t j = 125c 0.7 0.9 1.1 v r f t j = 25c 1.0 1.0 1.0 m ? t j = 125c 1.3 1.3 1.3 m ? i rrm i fnom = 400a di/dt off = 6600a/s v ge = -15v v cc = 1200v t j = 125c 560 a q rr t j = 125c 131 c e rr t j = 125c 95 mj r th(j-c)d per diode 0.081 k/w module l ce 22 nh r cc'+ee' res., terminal-chip t c = 25c 0.7 m ? t c = 125c 1m ? r th(c-s) per module 0.03 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm w 400 g temperature sensor r 100 t c =100c (r 25 =5 k ? ) 0,493 5% k ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 4s gb trench igbt modules semix604gb176hds preliminary data features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications ? ac inverter drives ?ups ? electronic welders remarks
semix604gb176hds ? by semikron 03.04.2008 3 fig. 1 typ. output char acteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic
semix604gb176hds 4 03.04.2008 ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 typ. transient thermal impedance fig. 10 typ. cal diode forward charact., incl. r cc'+ee' fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovery charge
semix604gb176hds ? by semikron 03.04.2008 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix this technical information specifies semiconductor devices but prom ises no characteristics. no warranty or gurantee expressed o r implied is made regarding delivery, performance or suitability. semix 4s gb
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